| PART |
Description |
Maker |
| 2N2905AHR |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A
|
STMicroelectronics
|
| 2N2696CSM 2N2696CSMG4 |
Bipolar PNP Device in a Hermetically sealed LCC1
500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | LLCC
|
Seme LAB
SEMELAB LTD
|
| 2N3700UBG |
Hi-Rel NPN bipolar transistor 80 V, 1 A
|
ST Microelectronics
|
| 2N3700RHRT 2N3700RHRG 2N3700HRT J2N3700UB1 2N3700R |
Hi-Rel NPN bipolar transistor 80 V, 1 A
|
ST Microelectronics
|
| 2N5551HR |
Hi-Rel NPN bipolar transistor 160 V - 0.5 A
|
STMicroelectronics
|
| 2N5551RHRG 2N5551RHRT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A
|
ST Microelectronics
|
| MMBT2131T1-D |
General Purpose Transistors PNP Bipolar Junction Transistor (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor.
|
ON Semiconductor
|
| 2N5664SMD |
NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS
|
SEME-LAB[Seme LAB]
|
| IRGVH50F |
INSULATED GATE BIPOLAR TRANSISTOR
1200V DISCRETE Hi-Rel IGBT in a TO-258AA package
|
International Rectifier
|
| IRGMC30U |
600V DISCRETE Hi-Rel IGBT in a TO-254AA package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| HGTP14N37G3VL HGT1S14N37G3VLS HGT1S14N37G3VLS9A |
TRANS IGBT CHIP N-CH 380V 25A 3TO-263AB
14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs
TRANS PNP BIPOLAR 45V SOT323
TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB
TRANSISTOR PNP BIPOLAR 45V SOT23
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| PO38 |
Bipolar PNP Device in a Hermetically sealed TO39
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 500MA I(C) | TO-39
|
Seme LAB
|
